SGL40N150D datasheet, igbt equivalent, Fairchild Semiconductor

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datasheet Download (Size : 419.29KB)

Features and benefits

* High speed switching
* Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A
* High input impedance
* Built-in fast recovery diode Applications Home app.

Application

Features
* High speed switching
* Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A
* High input impeda.

Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The SGL40N150D is designed for induction heating applications. Features
* High speed switching
* Low saturation voltage : VCE(sat) = 3.7 V @ I.

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