SFWI2955 - Advanced Power MOSFET

Product Overview

Fairchild Semiconductor

Part number	SFWI2955
Manufacturer	Fairchild Semiconductor
File Size	248.77 KB
Description	Advanced Power MOSFET
Datasheet	SFWI2955 Datasheet
Additional preview pages of the SFWI2955 datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = -60V Low RDS(ON) : 0.22 Ω (Typ. ) 1 SFW/I2955 BVDSS = -60 V RDS(on) = 0.3Ω ID = -9.4 A D2-PAK 2 o I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuo.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: May 20, 2005 |