n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge o n 175 C Operating Temperature n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max. ) @ VDS = -60V n Low RDS(ON) : 0.362 Ω (Typ. )
SFS9Z14
BVDSS = -60 V RDS(on) = 0.5 Ω ID = -5.3 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (T.
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Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge o n 175 C Operating Temperature n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -60V n Low RDS(ON) : 0.362 Ω (Typ.)
SFS9Z14
BVDSS = -60 V RDS(on) = 0.5 Ω ID = -5.3 A
TO-220F
1
2
3
1.Gate 2. Drain 3.
SFS9Z14 Datasheet
