SFR9230B - 200V P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

• -5.4A, -200V, RDS(on) = 0.8Ω @VGS = -10 V Low gate charge ( typical 33 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability S D G! !.
• ▶ ▲ G S D-PAK SFR Series I-PAK G D S SFU Series.
• ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous.