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Fairchild Semiconductor Electronic Components Datasheet

SFP36N03 Datasheet

Advanced Power MOSFET

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Advanced Power MOSFET
SFP36N03www.DataSheet4U.com
FEATURES
s Avalanche Rugged Technology
s Rugged Gate Oxide Technology
s Lower Input Capacitance
s Improved Gate Charge
s Extended Safe Operating Area
s Lower Leakage Current : 10 μA (Max.) @ VDS = 30V
s Lower RDS(ON) : 0.012Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25)
Continuous Drain Current (TC=100)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8from case for 5-seconds
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BVDSS = 30 V
RDS(on) = 0.018Ω
ID = 36 A
TO-220
2
3
1.Gate 2. Drain 3. Source
Value
30
36
25.3
144
±20
775
36
9.4
5.5
94
0.63
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/
Typ.
--
0.5
--
Max.
1.60
--
62.5
Units
/W
2001 Fairchild Semiconductor Corporation
Rev. A1


Fairchild Semiconductor Electronic Components Datasheet

SFP36N03 Datasheet

Advanced Power MOSFET

No Preview Available !

SFP36N03
N-CHANNwEwLw.DataSheet4U.com
POWER MOSFET
Electrical Characteristics (TC=25unless otherwise specified)
Symbol
BVDSS
ΔBV/ΔTJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
30 -- --
-- 0.036 --
1.0 -- 2.5
-- -- 100
-- -- -100
-- -- 10
-- -- 100
V
V/
V
nA
μA
VGS=0V,ID=250μA
ID=250μA See Fig 7
VDS=5V,ID=250μA
VGS=20V
VGS=-20V
VDS=30V
VDS=24V,TC=150
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- -- 0.018 VGS=10V,ID=18A
-- -- 0.022
VGS=5V,ID=18A
-- 6.5 --
VDS=30V,ID=18A
-- 1280 1600
-- 600 900 pF VGS=0V,VDS=25V,f =1MHz
See Fig 5
-- 250 350
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 15 40
--
--
61 130
54 115
ns
VDD=15V,ID=36A,
RG=10.5
See Fig 13 ④ ⑤
-- 69 145
Total Gate Charge
Gate-Source Charge
Gate-Drain(Miller) Charge
-- 30 40
VDS=24V,VGS=5V,
-- 10 -- nC ID=36A
-- 17 --
See Fig 6 & Fig 12 ④ ⑤
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
--
-- 36
Integral reverse pn-diode
A
-- 144
in the MOSFET
-- -- 1.5 V TJ=25,IS=36A,VGS=0V
-- 25 -- ns TJ=25,IF=36A
-- 0.22 -- μC diF/dt=100A/μs
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=0.6mH, IAS=36A, VDD=15V, RG=27, Starting TJ =25
ISD36A, di/dt100A/μs, VDDBVDSS , Starting TJ =25
Pulse Test : Pulse Width = 250μs, Duty Cycle 2%
Essentially Independent of Operating Temperature


Part Number SFP36N03
Description Advanced Power MOSFET
Maker Fairchild Semiconductor
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