SFP36N03
N-CHANNwEwLw.DataSheet4U.com
POWER MOSFET
Electrical Characteristics (TC=25℃ unless otherwise specified)
Symbol
BVDSS
ΔBV/ΔTJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
30 -- --
-- 0.036 --
1.0 -- 2.5
-- -- 100
-- -- -100
-- -- 10
-- -- 100
V
V/℃
V
nA
μA
VGS=0V,ID=250μA
ID=250μA See Fig 7
VDS=5V,ID=250μA
VGS=20V
VGS=-20V
VDS=30V
VDS=24V,TC=150℃
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- -- 0.018 Ω VGS=10V,ID=18A
-- -- 0.022
VGS=5V,ID=18A
-- 6.5 --
VDS=30V,ID=18A
④
④
④
-- 1280 1600
-- 600 900 pF VGS=0V,VDS=25V,f =1MHz
See Fig 5
-- 250 350
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 15 40
--
--
61 130
54 115
ns
VDD=15V,ID=36A,
RG=10.5Ω
See Fig 13 ④ ⑤
-- 69 145
Total Gate Charge
Gate-Source Charge
Gate-Drain(＂Miller＂) Charge
-- 30 40
VDS=24V,VGS=5V,
-- 10 -- nC ID=36A
-- 17 --
See Fig 6 & Fig 12 ④ ⑤
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
① --
-- 36
Integral reverse pn-diode
A
-- 144
in the MOSFET
④ -- -- 1.5 V TJ=25℃,IS=36A,VGS=0V
-- 25 -- ns TJ=25℃,IF=36A
-- 0.22 -- μC diF/dt=100A/μs
④
Notes ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=0.6mH, IAS=36A, VDD=15V, RG=27Ω, Starting TJ =25℃
③ ISD≤36A, di/dt≤100A/μs, VDD≤BVDSS , Starting TJ =25℃
④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%
⑤ Essentially Independent of Operating Temperature
