n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Low RDS(ON) : 0.161 Ω (Typ.) 1 SFW/I9540 BVDSS = -100 V RDS(on) = 0.2 Ω I.