SFF9250L
FEATURES
❑ Logic-Level Gate Drive ❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑ Improved Gate Charge ❑ Extended Safe Operating Area ❑ Lower Leakage Current : 10u A (Max.) @ VDS=-200V ❑ Lower RDS(ON) : 0.175 Ω (Typ.)
BVDSS = -200 V RDS(on) = 0.23 Ω ID = -12.6 A
TO-3PF
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 °C) Continuous Drain Current (TC=100 °C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 °C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 5-seconds
② ① ① ③ ①
Value -200 -12.6 -7.9 -50.4 ±20 990 -12.6 20.4 -5.0 90 0.72
- 55 to +150
Units V A A V m J A m J V/ns W W/ °C
°C...
