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SFF9250L - Advanced Power MOSFET

Key Features

  • ❑ Logic-Level Gate Drive ❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑ Improved Gate Charge ❑ Extended Safe Operating Area ❑ Lower Leakage Current : 10uA (Max. ) @ VDS=-200V ❑ Lower RDS(ON) : 0.175 Ω (Typ. ) SFF9250L BVDSS = -200 V RDS(on) = 0.23 Ω ID = -12.6 A TO-3PF 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 °.

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Full PDF Text Transcription for SFF9250L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SFF9250L. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com Advanced Power MOSFET FEATURES ❑ Logic-Level Gate Drive ❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑ Impr...

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ology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑ Improved Gate Charge ❑ Extended Safe Operating Area ❑ Lower Leakage Current : 10uA (Max.) @ VDS=-200V ❑ Lower RDS(ON) : 0.175 Ω (Typ.) SFF9250L BVDSS = -200 V RDS(on) = 0.23 Ω ID = -12.6 A TO-3PF 1 2 3 1.Gate 2. Drain 3.

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