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Fairchild Semiconductor Electronic Components Datasheet

RURP640CC Datasheet

Ultrafast Dual Diodes

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RURP640CC, RURP650CC,
RURP660CC
January 2002
6A, 400V - 600V Ultrafast Dual Diodes
Features
Package
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . +175oC
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
CATHODE
(FLANGE)
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Description
The RURP640CC, RURP650CC, and RURP660CC are
ultrafast dual diodes with soft recovery characteristics (tRR <
55ns). They have low forward voltage drop and are silicon
nitride passivated ion-implanted epitaxial planar construc-
tion.
Symbol
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits, reduc-
ing power loss in the switching transistors.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RURP640CC
TO-220AB
RURP640C
RURP650CC
TO-220AB
RURP650C
RURP660CC
TO-220AB
RURP660C
NOTE: When ordering, use the entire part number.
Formerly developmental type TA49038.
JEDEC TO-220AB
ANODE 2
CATHODE
ANODE 1
K
A1 A2
Absolute Maximum Ratings (per leg) TC = +25oC, Unless Otherwise Specified
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . .IF(AV)
(TC = +155oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave, 1 phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . EAVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
RURP640CC
400
400
400
6
12
60
50
10
-65 to +175
RURP650CC
500
500
500
6
12
60
50
10
-65 to +175
RURP660CC
600
600
600
6
UNITS
V
V
V
A
12 A
60 A
50
10
-65 to +175
W
mJ
oC
©2002 Fairchild Semiconductor Corporation
RURP640CC, RURP650CC, RURP660CC Rev. B


Fairchild Semiconductor Electronic Components Datasheet

RURP640CC Datasheet

Ultrafast Dual Diodes

No Preview Available !

Specifications RURP640CC, RURP650CC, RURP660CC
Electrical Specifications (per leg) TC = +25oC, Unless Otherwise Specified
LIMITS
RURP640CC
RURP650CC
RURP660CC
SYMBOL
TEST CONDITION
MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
VF IF = 6A, TC = +25oC
IF = 6A, TC = +150oC
IR VR = 400V, TC = +25oC
VR = 500V, TC = +25oC
VR = 600V, TC = +25oC
IR VR = 400V, TC = +150oC
VR = 500V, TC = +150oC
VR = 600V, TC = +150oC
-
-
-
-
-
-
-
-
- 1.5 -
- 1.2 -
- 100 -
---
---
- 500 -
---
---
- 1.5 -
- 1.2 -
---
- 100 -
---
---
- 500 -
---
- 1.5 V
- 1.2 V
- - µA
- - µA
- 100 µA
- - µA
- - µA
- 500 µA
tRR IF = 1A, dIF/dt = 200A/µs
-
- 55 -
- 55 -
- 55 ns
IF = 6A, dIF/dt = 200A/µs
-
- 60 -
- 60 -
- 60 ns
tA IF = 6A, dIF/dt = 200A/µs - 28 -
- 28 -
- 28 -
ns
tB IF = 6A, dIF/dt = 200A/µs - 16 -
- 16 -
- 16 -
ns
QRR
IF = 6A, dIF/dt = 200A/µs
- 150 -
- 150 -
- 150 -
nC
CJ
RθJC
VR = 10V, IF = 0A
- 25 -
- -3
- 25 -
- -3
- 25 - pF
- - 3 oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time (See Figure 2), summation of tA + tB.
tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy. (See Figures 10 and 11).
pw = pulse width.
D = duty cycle.
V1 AMPLITUDE CONTROLS IF
V2 AMPLITUDE CONTROLS dIF/dt
L1 = SELF INDUCTANCE OF
R4 + LLOOP
R1
+V1
0
t2
t1
Q1
R2
0
-V2
t3
Q3
R3
+V3
Q2
t1 5tA(MAX)
t2 > tRR
t3 > 0
L1 tA(MIN)
R4 10
LLOOP
DUT
Q4
C1
-V4
R4
IF
0
dIF
dt
tRR
tA tB
0.25 IRM
IRM
VR
VRM
FIGURE 1. tRR TEST CIRCUIT
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
©2002 Fairchild Semiconductor Corporation
RURP640CC, RURP650CC, RURP660CC Rev. B


Part Number RURP640CC
Description Ultrafast Dual Diodes
Maker Fairchild Semiconductor
Total Page 6 Pages
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