RMPA1759 Datasheet | Fairchild Semiconductor

September 2004 Korean-PCS Power Edge™ Power Amplifier Module General Description The RMPA1759 power amplifier module (PAM) is designed for Korean CDMA and CDMA2000-1X personal munications system (PCS) applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external ponents and Features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our In Ga P Heterojunction Bipolar Transistor (HBT) process. Features - Single positive-supply operation and low power and shutdown modes - 38% CDMA efficiency at +28d Bm average output power - pact LCC package- 4.0 x 4.0 x 1.5 mm with industry standard pinout - Internally matched to 50Ω and DC blocked RF input/ output. - Meets CDMA2000-1XRTT performance requirements Device Absolute Ratings1 Symbol Vcc1, Vcc2 Vref Vmode Pin TSTG Parameter Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature Value 5.0 2.6 to 3.5 3.5 +10 -55 to +150 Units V V V d Bm °C Note: 1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. ©2004 Fairchild Semiconductor Corporation RMPA1759 Rev. C Module Block Diagram VCC1, VCC2 (1, 10) COLLECTOR BIAS PA MODULE GND (3,6, 7, 9, 11) INTERSTAGE MATCH INPUT MATCHING NETWORK INPUT STAGE OUTPUT STAGE OUTPUT MATCHING NETWORK RF IN (2) MMIC RF OUT (8) INPUT STAGE BIAS OUTPUT STAGE BIAS VREF (5) BIAS CONTROL VCC=3.4V (nom) VREF=2.85V (nom) 1720-1780 MHz 50Ω...