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RFD4N06LSM Datasheet

Manufacturer: Fairchild (now onsemi)
RFD4N06LSM datasheet preview

Datasheet Details

Part number RFD4N06LSM
Datasheet RFD4N06LSM_FairchildSemiconductor.pdf
File Size 38.38 KB
Manufacturer Fairchild (now onsemi)
Description N-Channel Power MOSFET
RFD4N06LSM page 2 RFD4N06LSM page 3

RFD4N06LSM Overview

This performance is acplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control from logic circuit supply voltages. Formerly developmental type TA09520.

RFD4N06LSM Key Features

  • 4A, 60V
  • rDS(ON) = 0.600Ω
  • Design Optimized for 5 Volt Gate Drive
  • Can be Driven Directly From Q-MOS, N-MOS, or TTL Circuits
  • SOA is Power Dissipation Limited
  • 175oC Rated Junction Temperature
  • Logic Level Gate
  • High Input Impedance
  • Related Literature
  • TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”

RFD4N06LSM from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Intersil Corporation Logo RFD4N06LSM N-Channel Power MOSFET Intersil Corporation
Intersil Corporation Logo RFD4N06L N-Channel Power MOSFET Intersil Corporation
Fairchild (now onsemi) logo - Manufacturer

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