RFD4N06LSM Datasheet | Fairchild Semiconductor

Features - 4A, 60V - r DS(ON) = 0.600Ω - Design Optimized for 5 Volt Gate Drive - Can be Driven Directly From Q-MOS, N-MOS, or TTL Circuits - SOA is Power Dissipation Limited - 175o C Rated Junction Temperature - Logic Level Gate - High Input Impedance - Related Literature Ordering Information PART NUMBER RFD4N06L RFD4N06LSM PACKAGE TO-251AA TO-252AA BRAND RFD4N06L RFD4N06LSM - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Symbol NOTE: When ordering, use the entire part number. Packaging JEDEC TO-251AA SOURCE DRAIN GATE GATE SOURCE JEDEC TO-252AA DRAIN (FLANGE) DRAIN (FLANGE) 6-189 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://.intersil. or 407-727-9207 | Copyright © Intersil Corporation 1999 RFD4N06L, RFD4N06LSM Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified RFD4N06L RFD4N06LSM 60 60 ±10 4 10 30 0.20 -55 to 175 300 260 UNITS V V V A A W W/o C o C o C o C Drain to Source Breakdown Voltage (Note 1) - - - - - - - - VDS Drain to Gate Voltage (Note 1)- - - - - - - - - - .VDGR Gate to Source Voltage -...