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RFD4N06LSM - N-Channel Power MOSFET

Description

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Features

  • 4A, 60V.
  • rDS(ON) = 0.600Ω.
  • Design Optimized for 5 Volt Gate Drive.
  • Can be Driven Directly From Q-MOS, N-MOS, or TTL Circuits.
  • SOA is Power Dissipation Limited.
  • 175oC Rated Junction Temperature.
  • Logic Level Gate.
  • High Input Impedance.
  • Related Literature Ordering Information PART NUMBER RFD4N06L RFD4N06LSM.

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Datasheet Details

Part number RFD4N06LSM
Manufacturer Fairchild Semiconductor
File Size 38.38 KB
Description N-Channel Power MOSFET
Datasheet download datasheet RFD4N06LSM Datasheet
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Full PDF Text Transcription

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RFD4N06L, RFD4N06LSM Data Sheet June 1999 File Number 2837.1 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control from logic circuit supply voltages. Formerly developmental type TA09520. Features • 4A, 60V • rDS(ON) = 0.
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