PV218N50 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* 550V @TJ = 150°C
* Typ. RDS(on) = 0.265Ω @VGS = 10 V
* Low gate charge (typical 42 nC)
* Low Crss (typical 11 pF)
* Fast switching
* 100% avalan.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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