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PCRKA20065F8 - 650V / 200A Extremefast Diode

Key Features

  • AEC-Q101 Qualified.
  • Maximum Junction Temperature 175°C.
  • Extremefast technology with Soft Recovery.
  • Low Forward Voltage (VF = 1.35V (Typ) @IF = 200A).

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Other Datasheets by Fairchild (onsemi)

Part Number Description
PCRKA30065F8 650V / 300A Extremefast Diode

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PCRKA20065F8 650V/200A Extremefast Diode PCRKA20065F8 650V / 200A Extremefast Diode Features „ AEC-Q101 Qualified „ Maximum Junction Temperature 175°C „ Extremefast technology with Soft Recovery „ Low Forward Voltage (VF = 1.35V (Typ) @IF = 200A) Applications „ Automotive Traction Modules „ General Power Modules April 2016 Ordering Information P/N Packing Die Size Anode Area Die thickness Top Metal Back Metal Topside Passivation Wafer diameter Max. Possible Die per Wafer PCRKA20065F8 Wafer (Saw-On-Foil) mils mm 197 X 394 5,000 X 10,000 176 X 373 4,478 X 9,475 3 77± 8 Al (0.5% Cu) VNi/Ag Silicon Nitride Plus Polymide 200mm 487 ©2016 Fairchild Semiconductor Corporation PCRKA20065F8 Rev. 1.0 1 www.fairchildsemi.