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Fairchild Semiconductor Electronic Components Datasheet

PCRKA20065F8 Datasheet

650V / 200A Extremefast Diode

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PCRKA20065F8
650V / 200A Extremefast Diode
Features
„ AEC-Q101 Qualified
„ Maximum Junction Temperature 175°C
„ Extremefast technology with Soft Recovery
„ Low Forward Voltage (VF = 1.35V (Typ) @IF = 200A)
Applications
„ Automotive Traction Modules
„ General Power Modules
April 2016
Ordering Information
P/N
Packing
Die Size
Anode Area
Die thickness
Top Metal
Back Metal
Topside Passivation
Wafer diameter
Max. Possible Die per Wafer
PCRKA20065F8
Wafer (Saw-On-Foil)
mils mm
197 X 394
5,000 X 10,000
176 X 373
4,478 X 9,475
3 77± 8
Al (0.5% Cu)
VNi/Ag
Silicon Nitride Plus Polymide
200mm
487
©2016 Fairchild Semiconductor Corporation
PCRKA20065F8 Rev. 1.0
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

PCRKA20065F8 Datasheet

650V / 200A Extremefast Diode

No Preview Available !

Absolute Maximum Ratings (TVJ =25oC unless otherwise specified)
Symbol
VR
IF
TVJ
Tstg
Parameter
VoltageCathodetoAnode
Continous foeward current
Junction Temperature Range
Operating Junction Temperature
Storage Temperature Range
Ratings
650
(Note 1)
-55 to +175
-55 to +150
+17 to +25
Notes:
1: Depends on the thermal properties of assembly
Units
V
A
oC
oC
oC
Electrical Characteristics of the Diode (TVJ =25oC unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
Static Characteristics (tested on wafer)
IR Reverse Current
VR = 650V
- - 30
VBR Breakdown Voltage IR = 1mA
650 -
-
VF Forward Voltage
IF = 100A
0.7 1.15 1.7
Electrical Characteristics (not subject to production test, verified by design / characterization)
IR Reverse Current
VR = 650V, TVJ = 175oC
-
850
VF Forward Voltage
IF = 200A
IF = 200A, TVJ = 175oC
- 1.35 1.9
- 1.30 -
Q- rr
Irr
Trr
Reverse Recovery
Charge
Reverse Recovery
Current
Reverse Recovery
Time
IF = 200A, VR = 400V,
d2I5Fo/Cdt = 1000A/μs, TVJ =
-
-
-
3.2
55
117
Qrr
Irr
Trr
Reverse Recovery
Charge
Reverse Recovery
Current
Reverse Recovery
Time
IF = 200A, VR = 400V,
d1I7F5/doCt = 1000A/μs, TVJ =
-
-
-
15.1
122
247
Units
μA
V
V
μA
V
V
μC
A
ns
μC
A
ns
For ordering, technique and other information on Fairchild automotive bare die products, please contact
automotivedie@fairchildsemi.com
©2016 Fairchild Semiconductor Corporation
PCRKA20065F8 Rev. 1.0
2
www.fairchildsemi.com


Part Number PCRKA20065F8
Description 650V / 200A Extremefast Diode
Maker Fairchild Semiconductor
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