Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology..
Features
- 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
!.
- ◀
▲.
- G! G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current -.
