Datasheet4U Logo Datasheet4U.com

P8N60C - FQP8N60C

This page provides the datasheet information for the P8N60C, a member of the P8N60 FQP8N60C family.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology.

Features

  • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
  • ◀ ▲.
  • G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current -.

📥 Download Datasheet

Datasheet preview – P8N60C

Datasheet Details

Part number P8N60C
Manufacturer Fairchild Semiconductor
File Size 965.28 KB
Description FQP8N60C
Datasheet download datasheet P8N60C Datasheet
Additional preview pages of the P8N60C datasheet.

📁 Similar Datasheet

  • P8N18 - RFP8N18 (ETC)
  • P8NA50 - STP8NA50 (ST Microelectronics)
  • P8NC50FP - STP8NC50FP (STMicroelectronics)
  • P8NC60FP - STP8NC60FP (STMicroelectronics)
  • P8NK100Z - STP8NK100Z (STMicroelectronics)
  • P8NK80 - STP8NK80Z (STMicroelectronics)
  • P8NK80ZFP - N-Channel MOSFET (STMicroelectronics)
  • P8NM50 - STP8NM50 (STMicroelectronics)
  • P8NM60 - N-Channel MOSFET (STMicroelectronics)
  • P8NS25 - STP8NS25 (ST Microelectronics)
Other Datasheets by Fairchild Semiconductor

    Full PDF Text Transcription

    Click to expand full text
    FQP8N60C/FQPF8N60C QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. ® Features • • • • • • 7.5A, 600V, RDS(on) = 1.
    Published: |