Datasheet Summary
FQP7N80C/FQPF7N80C
QFET
FQP7N80C/FQPF7N80C
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies.
Features
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- - 6.6A, 800V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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