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MTP3055VL - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching applications i.e.

power supplies and power motor controls.

Features

  • faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies). Features.
  • 12 A, 60 V. RDS(ON) = 0.18 Ω @ VGS = 5 V.
  • Critical DC electrical parameters specified at elevated temperature.
  • Low drive requirements allowing operation directly from logic drivers. Vgs(th) < 2 V.
  • Rugged internal source-drain diode can eliminate the need for an ext.

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Datasheet Details

Part number MTP3055VL
Manufacturer Fairchild Semiconductor
File Size 39.35 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet MTP3055VL Datasheet
Additional preview pages of the MTP3055VL datasheet.

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Full PDF Text Transcription

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MTP3055VL June 2000 DISTRIBUTION GROUP* MTP3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. This MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies). Features • 12 A, 60 V. RDS(ON) = 0.18 Ω @ VGS = 5 V • Critical DC electrical parameters specified at elevated temperature. • Low drive requirements allowing operation directly from logic drivers. Vgs(th) < 2 V.
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