MOC8204M Datasheet | Fairchild Semiconductor

Features - High voltage: tm General Description The H11DXM, 4N38M and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. - MOC8204M, BVCER = 400V - H11D1M, H11D2M, BVCER = 300V - H11D3M, BVCER = 200V .. - High isolation voltage: - 7500 VAC peak, 1 second - Underwriters Laboratory (UL) recognized File # E90700, Volume 2 Applications - Power supply regulators - Digital logic inputs - Microprocessor inputs - Appliance sensor systems - Industrial controls Schematic ANODE 1 6 BASE CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER ©2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2 .fairchildsemi. H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the remended operating conditions and stressing the parts to these levels is not remended. In addition, extended exposure to stresses above the remended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol TOTAL DEVICE TSTG TOPR TSOL PD .. Parameter Storage Temperature Operating Temperature Lead Solder Temperature (Wave Solder) Total Device Power Dissipation @ TA = 25°C Derate Above 25°C Device All All All All Value -55 to +150 -40 to +100 260 for 10 sec 260 3.5 Units °C °C °C m W m W/°C m A V A m W m W/°C EMITTER IF VR IF(pk) PD Forward DC Current(1) Reverse Input Voltage(1) Forward...