Datasheet4U Logo Datasheet4U.com

MOC8204M - High Voltage Phototransistor Optocouplers

General Description

The H11DXM, 4N38M and MOC8204M are phototransistor-type optically coupled optoisolators.

A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor.

The device is supplied in a standard plastic six-pin dual-in-line package.

MOC8204M, BVCER = 400V

Key Features

  • High voltage: tm General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MOC8204M 6-Pin DIP High Voltage Phototransistor Optocouplers ON Semiconductor
MOC8204 6-Pin DIP Optoisolators Motorola
MOC8205 6-Pin DIP Optoisolators Motorola
MOC8206 6-Pin DIP Optoisolators Motorola
MOC8020 6-Pin DIP Optoisolators Motorola

Other Datasheets by Fairchild (now onsemi)

Part Number Description
MOC8204 GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
MOC8020 PHOTODARLINGTON OPTOCOUPLERS
MOC8021 PHOTODARLINGTON OPTOCOUPLERS
MOC8030 PHOTODARLINGTON OPTOCOUPLERS
MOC8050 PHOTODARLINGTON OPTOCOUPLERS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers September 2007 H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers Features ■ High voltage: tm General Description The H11DXM, 4N38M and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. – MOC8204M, BVCER = 400V – H11D1M, H11D2M, BVCER = 300V – H11D3M, BVCER = 200V www.DataSheet4U.