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MOC8204M - High Voltage Phototransistor Optocouplers

Description

The H11DXM, 4N38M and MOC8204M are phototransistor-type optically coupled optoisolators.

A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor.

The device is supplied in a standard plastic six-pin dual-in-line package.

MOC8204M, BVCER = 400V

Features

  • High voltage: tm General.

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Datasheet Details

Part number MOC8204M
Manufacturer Fairchild Semiconductor
File Size 260.13 KB
Description High Voltage Phototransistor Optocouplers
Datasheet download datasheet MOC8204M Datasheet
Additional preview pages of the MOC8204M datasheet.

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Full PDF Text Transcription

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H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers September 2007 H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers Features ■ High voltage: tm General Description The H11DXM, 4N38M and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. – MOC8204M, BVCER = 400V – H11D1M, H11D2M, BVCER = 300V – H11D3M, BVCER = 200V www.DataSheet4U.
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