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Fairchild Semiconductor Electronic Components Datasheet

KSE44H10 Datasheet

NPN Epitaxial Silicon Transistor

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KSE44H Series
General Purpose Power Switching Applications
• Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A
• Fast Switching Speeds
• Complement to KSE45H
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
: KSE44H 1,2
: KSE44H 4,5
: KSE44H 7,8
: KSE44H 10,11
VEBO
IC
ICP
PC
PC
TJ
TSTG
Emitter- Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
30
45
60
80
5
10
20
50
1.67
150
- 55 ~ 150
Units
V
V
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICES
IEBO
hFE
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
: KSE44H 1,4,7,10
: KSE44H 2,5,8,11
VCE = Rated VCEO, VEB = 0
VEB = 5V, IC = 0
VCE = 1V, IC = 2A
VCE(sat)
*Collector-Emitter Saturation Voltage
: KSE44H 1, 4, 7 10
: KSE44H 2, 5, 8,11
VBE (sat)
*Base-Emitter Saturation Voltage
fT Current Gain Bandwidth Product
Cob Output Capacitance
tON Turn ON Time
tSTG
Storage Time
tF Fall Time
* Pulse test: PW300µs, Duty cycle2%
IC = 8A, IB = 0.8A
IC = 8A, IB = 0.4A
IC = 8A, IB = 0.8A
VCE = 10V, IC = 0.5A
VCB = 10V, f = 1MHz
VCC =20V, IC = 5A
IB1 = - IB2 = 0.5A
Min.
35
60
Typ.
50
130
300
500
140
Max.
10
100
Units
µA
µA
1V
1V
1.5 V
MHz
pF
ns
ns
ns
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001


Fairchild Semiconductor Electronic Components Datasheet

KSE44H10 Datasheet

NPN Epitaxial Silicon Transistor

No Preview Available !

Typical Characteristics
1000
100
V = 1V
CE
10
1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
1000
f=100MHZ
100
10
1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Output Capacitance
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
Tc[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2001 Fairchild Semiconductor Corporation
10
1 VBE(sat)
I = 10 I
CB
0.1
VCE(sat)
0.01
0.01
0.1 1
10
IC[A], COLLECTOR CURRENT
100
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
DC
1
44H 1,2
44H 4,5
44H 7,8
44H 10,11
10µs
100µs
0.1
1
10 100 1000
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 4. Safe Operating Area
Rev. A1, June 2001


Part Number KSE44H10
Description NPN Epitaxial Silicon Transistor
Maker Fairchild Semiconductor
Total Page 4 Pages
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