KSE340
High Voltage General Purpose Applications
• High Collector-Emitter Breakdown Voltage
• Suitable for Transformer
• Complement to KSE350
1 TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
hFE
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
IC = 1mA, IB = 0
VCB = 300V, IE =0
VBE = 3V, IC = 0
VCE = 10V, IC = 50mA
Value
300
300
5
500
20
150
- 65 ~ 150
Units
V
V
V
mA
W
°C
°C
Min.
300
30
Max.
100
100
240
Units
V
µA
µA
©2000 Fairchild Semiconductor International
Rev. A1, December 2000
