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Fairchild Semiconductor Electronic Components Datasheet

KSE13009F Datasheet

NPN Silicon Transistor

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KSE13009F
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1 TO-220F
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
V CEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
700
400
9
12
24
6
50
150
-65 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
IEBO
hFE
VCE(sat)
Collector-Emitter Sustaining Voltage
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain Bandwidth Product
tON Turn ON Time
tSTG
Storage Time
tF Fall Time
* Pulse Test: PW300µs, Duty Cycle2%
IC = 10mA, IB = 0
VEB = 7V, IC = 0
VCE = 5V, IC = 5A
VCE = 5V, IC = 8A
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
IC = 12A, IB = 3A
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
VCB = 10V , f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC =125V, IC = 8A
IB1 = - IB2 = 1.6A
RL = 15,6
Min.
400
8
6
4
Typ.
180
Max.
1
40
30
1
1.5
3
1.2
1.6
1.1
3
0.7
Units
V
mA
V
V
V
V
V
pF
MHz
µs
µs
µs
©2000 Fairchild Semiconductor International
Rev. A, February 2000


Fairchild Semiconductor Electronic Components Datasheet

KSE13009F Datasheet

NPN Silicon Transistor

No Preview Available !

Typical Characteristics
100
V = 5V
CE
10
1
0.1 1 10
Ic[A], COLLECTOR CURRENT
Figure 1. DC current Gain
100
1000
100
10
1
0.1 1 10 100 1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Output Capacitance
10000
1000
V =125V
CC
I =5I
CB
tSTG
100
0.1
tF
1 10
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
100
©2000 Fairchild Semiconductor International
10
1 VBE(sat)
I =3I
CB
0.1
VCE(sat)
0.01
0.1
1 10
IC[A], COLLECTOR CURRENT
100
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10000
1000
100
V =125V
CC
I =5I
CB
tR
tD, VBE(off)=5V
10
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 4. Turn On Time
100
100
10
1
0.1
0.01
1
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
Figure 6. Safe Operating Area
Rev. A, February 2000


Part Number KSE13009F
Description NPN Silicon Transistor
Maker Fairchild Semiconductor
Total Page 5 Pages
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