KSE13009 Datasheet | Fairchild Semiconductor

KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application - High Speed Switching - Suitable for Switching Regulator and Motor Control TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSE13008 : KSE13009 VCEO Collector-Emitter Voltage : KSE13008 : KSE13009 VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 300 400 9 12 24 6 100 150 - 65 ~ 150 V V V A A A W °C °C 600 700 V V Value Units Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : KSE13008 : KSE13009 Emitter Cut-off Current - DC Current Gain - Collector-Emitter Saturation Voltage Test Condition IC = 10m A, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 5A VCE = 5V, IC = 8A IC = 5A, IB = 1A IC = 8A, IB = 1.6A IC = 12A, IB = 3A IC = 5A, IB = 1A IC = 8A, IB = 1.6A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 8A IB1 = - IB2 = 1.6A RL = 15,6Ω 4 1.1 3 0.7 180 8 6 Min. 300 400 1 40 30 1 1.5 3 1.2 1.6 V V V V V p F MHz µs µs µs Typ. Max. Units V V m A IEBO h FE VCE(sat) VBE (sat) Cob f T t ON t STG t F - Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time - Pulse test: PW≤300µs, Duty cycle≤2% ©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE VCE = 5V IC = 3 IB h FE, DC CURRENT GAIN V BE(sat) VCE (sat) 1 0.1 0.01...