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Fairchild Semiconductor Electronic Components Datasheet

KSE13009 Datasheet

NPN Silicon Transistor

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KSE13008/13009
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transisor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: KSE13008
: KSE13009
VCEO
Collector-Emitter Voltage
: KSE13008
: KSE13009
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
600
700
300
400
9
12
24
6
100
150
- 65 ~ 150
Units
V
V
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
Collector-Emitter Sustaining Voltage
: KSE13008
: KSE13009
IC = 10mA, IB = 0
IEBO
hFE
VCE(sat)
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
VBE (sat)
* Base-Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain Bandwidth Product
tON Turn On Time
tSTG
Storage Time
tF Fall Time
* Pulse test: PW300µs, Duty cycle2%
VEB = 9V, IC = 0
VCE = 5V, IC = 5A
VCE = 5V, IC = 8A
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
IC = 12A, IB = 3A
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
VCB = 10V, f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC = 125V, IC = 8A
IB1 = - IB2 = 1.6A
RL = 15,6
Min. Typ. Max. Units
300 V
400 V
1 mA
8 40
6 30
1V
1.5 V
3V
1.2 V
1.6 V
180 pF
4 MHz
1.1 µs
3 µs
0.7 µs
©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001


Fairchild Semiconductor Electronic Components Datasheet

KSE13009 Datasheet

NPN Silicon Transistor

No Preview Available !

Typical Characteristics
100
V = 5V
CE
10
1
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
100
1000
100
10
1
0.1 1 10 100 1000
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Collector Output Capacitance
10000
1000
V =125V
CC
I =5I
CB
tSTG
100
0.1
tF
1 10
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
100
©2001 Fairchild Semiconductor Corporation
10
1 VBE(sat)
I =3I
CB
0.1
VCE(sat)
0.01
0.1
1 10
IC[A], COLLECTOR CURRENT
100
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10000
1000
100
V =125V
CC
I =5I
CB
tR
tD, VBE(off)=5V
10
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 4. Turn On Time
100
100
10
1
0.1
0.01
1
KSE13008
KSE13009
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
Figure 6. Safe Operating Area
Rev. A1, January 2001


Part Number KSE13009
Description NPN Silicon Transistor
Maker Fairchild Semiconductor
Total Page 5 Pages
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