Features
Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 60V.
Lower RDS(ON): 0.097Ω (Typ. )
IRFR/U014A
BVDSS = 60 V RDS(on) = 0.14Ω ID = 8.2 A
D-PAK
2 1 3 1
I-PAK
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continu.
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$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.097Ω (Typ.)
IRFR/U014A
BVDSS = 60 V RDS(on) = 0.14Ω ID = 8.2 A
D-PAK
2 1 3 1
I-PAK
2
3
1. Gate 2. Drain 3.
Published:
Mar 19, 2007
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