IRFP350
Overview
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10µA (Max.) @ VDS = 400V
- Low RDS(ON): 0.254Ω (Typ.)
| Part | IRFP350 |
|---|---|
| Description | Power MOSFET |
| Category | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Size | 231.17 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IRFP350LC | International Rectifier | Power MOSFET |
| IRFP350 | Intersil | N-Channel Power MOSFET |
| IRFP350 | Inchange Semiconductor | N-Channel MOSFET Transistor |
| IRFP350 | International Rectifier | Power MOSFET |
| IRFP350FI | STMicroelectronics | N-Channel MOSFET |