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IRFP350 - Power MOSFET

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Fairchild Semiconductor

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IRFP350 Power MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – IRFP350

Datasheet Details

Part number	IRFP350
Manufacturer	Fairchild Semiconductor
File Size	231.17 KB
Description	Power MOSFET
Datasheet	IRFP350 Datasheet
Additional preview pages of the IRFP350 datasheet.

Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 400V.
Low RDS(ON): 0.254Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1).

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Published: Aug 4, 2016 |