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Fairchild Semiconductor Electronic Components Datasheet

HUFA76645S3S Datasheet

75A/ 100V/ 0.015 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

No Preview Available !

Data Sheet
HUFA76645P3, HUFA76645S3S
January 2002
75A, 100V, 0.015 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
HUFA76645P3
GATE
SOURCE
HUFA76645S3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.014Ω, VGS = 10V
- rDS(ON) = 0.015Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA76645P3
TO-220AB
76645P
HUFA76645S3S
TO-263AB
76645S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76645S3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUFA76645P3,
HUFA76645S3S
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
Continuous
Continuous
(TC
(TC
(TC
(TC
=
=
=
=
1122005500ooCCooCC,, ,,VVVVGGGGSSSS====15054VVV.)5))V(.)F..(i..gF..uig..rue..r..e2..)2.. )...
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ID
ID
ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
100
100
±16
75
75
63
62
Figure 4
Figures 6, 17, 18
V
V
V
A
A
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
..
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
1. TJ = 25oC to 150oC.
310
2.07
-55 to 175
300
260
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2002 Fairchild Semiconductor Corporation
HUFA76645P3, HUFA76645S3S Rev. B


Fairchild Semiconductor Electronic Components Datasheet

HUFA76645S3S Datasheet

75A/ 100V/ 0.015 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

No Preview Available !

HUFA76645P3, HUFA76645S3S
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 12)
ID = 250µA, VGS = 0V , TC = -40oC (Figure 12)
VDS = 95V, VGS = 0V
VDS = 90V, VGS = 0V, TC = 150oC
VGS = ±16V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 11)
ID = 75A, VGS = 10V (Figures 9, 10)
ID = 63A, VGS = 5V (Figure 9)
ID = 62A, VGS = 4.5V (Figure 9)
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
RθJC
RθJA
TO-220 and TO-263
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
GATE CHARGE SPECIFICATIONS
VDD = 50V, ID = 62A
VGS = 4.5V, RGS = 2.4
(Figures 15, 21, 22)
VDD = 50V, ID = 75A
VGS = 10V,
RGS = 2.4
(Figures 16, 21, 22)
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgd
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 50V,
ID = 63A,
Ig(REF) = 1.0mA
(Figures 14, 19, 20)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
SYMBOL
VSD
Reverse Recovery Time
Reverse Recovered Charge
trr
QRR
TEST CONDITIONS
ISD = 63A
ISD = 30A
ISD = 63A, dISD/dt = 100A/µs
ISD = 63A, dISD/dt = 100A/µs
©2002 Fairchild Semiconductor Corporation
MIN TYP MAX UNITS
100 - - V
90 - - V
- - 1 µA
- - 250 µA
- - ±100 nA
1 - 3V
-
0.012 0.014
-
0.013 0.015
- 0.0135 0.0155
- - 0.48 oC/W
- - 62 oC/W
- - 490 ns
- 17 - ns
- 310 -
ns
- 46 - ns
- 155 -
ns
- - 300 ns
- - 175 ns
- 11 - ns
- 106 -
ns
- 69 - ns
- 175 -
ns
- - 365 ns
-
127 153
nC
- 70 84 nC
- 3.8 4.6 nC
- 10 - nC
- 34 - nC
- 4400 -
- 900 -
- 280 -
pF
pF
pF
MIN TYP MAX UNITS
-
-
1.25
V
- - 1.0 V
- - 128 ns
- - 520 nC
HUFA76645P3, HUFA76645S3S Rev. B


Part Number HUFA76645S3S
Description 75A/ 100V/ 0.015 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET
Maker Fairchild Semiconductor
Total Page 10 Pages
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