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Fairchild Semiconductor Electronic Components Datasheet

HUFA75831SK8 Datasheet

N-Channel MOSFET

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Data Sheet
HUFA75831SK8
December 2001
3A, 150V, 0.095 Ohm, N-Channel,
UltraFET® Power MOSFET
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
5
Symbol
SOURCE (1)
SOURCE (2)
SOURCE (3)
GATE (4)
DRAIN (8)
DRAIN (7)
DRAIN (6)
DRAIN (5)
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.095Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75831SK8
MS-012AA
75831SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA75831SK8T.
Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified
HUFA75831SK8
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
(TA
(TA
=
=
12050oCoC, ,VVGGSS==1100VV) )(F(Figiugruere22) ).
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ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
150
150
±20
3
2
Figure 4
Figures 6, 14, 15
V
V
V
A
A
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
1. TJ = 25oC to 125oC.
2. 50oC/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 10 second.
3. 152oC/W measured using FR-4 board with 0.054 in2 (34.8 mm2) copper pad at 1000 seconds
4. 189oC/W measured using FR-4 board with 0.0115 in2 (7.42 mm2) copper pad at 1000 seconds
2.5
20
-55 to 150
300
260
W
mW/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75831SK8 Rev. B


Fairchild Semiconductor Electronic Components Datasheet

HUFA75831SK8 Datasheet

N-Channel MOSFET

No Preview Available !

HUFA75831SK8
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 140V, VGS = 0V
VDS = 135V, VGS = 0V, TA = 150oC
VGS = ±20V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
Thermal Resistance Junction to
Ambient
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 10)
ID = 3A, VGS = 10V (Figure 9)
RθJA
Pad Area = 0.76 in2 (490.3 mm2) (Note 2)
Pad Area = 0.054 in2 (34.8 mm2) (Note 3)
Pad Area = 0.0115 in2 (7.42 mm2)(Note 4)
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
GATE CHARGE SPECIFICATIONS
VDD = 75V, ID = 3A
VGS = 10V,
RGS = 4.7
(Figures 18, 19)
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain "Miller" Charge
CAPACITANCE SPECIFICATIONS
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 75V,
ID = 3A,
Ig(REF) = 1.0mA
(Figures 13, 16, 17)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
ISD = 3A
ISD = 1.5A
ISD = 3A, dISD/dt = 100A/µs
ISD = 3A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
150 - - V
- - 1 µA
- - 250 µA
- - ±100 nA
2 - 4V
-
0.079 0.095
- - 50 oC/W
- - 152 oC/W
189 oC/W
- - 25 ns
- 11 - ns
- 6 - ns
- 40 - ns
- 9 - ns
- - 75 ns
- 66 80 nC
- 35 42 nC
- 2.4 2.9 nC
- 4.3 - nC
- 11 - nC
- 1175 -
- 275 -
- 72 -
pF
pF
pF
MIN TYP MAX UNITS
-
-
1.25
V
-
-
1.00
V
- - 132 ns
- - 380 nC
©2001 Fairchild Semiconductor Corporation
HUFA75831SK8 Rev. B


Part Number HUFA75831SK8
Description N-Channel MOSFET
Maker Fairchild Semiconductor
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