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Fairchild Semiconductor Electronic Components Datasheet

HUFA75344S3S Datasheet

75A/ 55V/ 0.008 Ohm/ N-Channel UltraFET Power MOSFETs

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HUFA75344G3, HUFA75344P3, HUFA75344S3S,
HUFA75344S3
Data Sheet
June 2003
75A, 55V, 0.008 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75344.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75344G3
TO-247
75344G
HUFA75344P3
TO-220AB
75344P
HUFA75344S3S
TO-263AB
75344S
HUFA75344S3
TO-262AA
75344S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75344S3ST.
Packaging
SOURCE
DRAIN
GATE
DRAIN
(TAB)
TO-247
Features
• 75A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- Thermal Impedance PSPICE and SABER Models
Available on the web at: www.Fairchild.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
DRAIN
(FLANGE)
TO-220AB
SOURCE
DRAIN
GATE
GATE
DRAIN
(FLANGE)
SOURCE
TO-263AB
SOURCE DRAIN
GATE
DRAIN
(FLANGE)
TO-262AA
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.mtp.fairchild.com/automotive.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2003 Fairchild Semiconductor Corporation
HUFA75344G3, HUFA75344P3, HUFA75344S3S, HUFA75344S3 Rev. B1


Fairchild Semiconductor Electronic Components Datasheet

HUFA75344S3S Datasheet

75A/ 55V/ 0.008 Ohm/ N-Channel UltraFET Power MOSFETs

No Preview Available !

HUFA75344G3, HUFA75344P3, HUFA75344S3S
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
55
55
±20
75
Figure 4
Figure 6
285
1.90
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
SYMBOL
BVDSS
IDSS
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
IGSS
VGS(TH)
rDS(ON)
RθJC
RθJA
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
tON
td(ON)
tr
td(OFF)
tf
tOFF
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Reverse Transfer Capacitance
CAPACITANCE SPECIFICATIONS
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
TEST CONDITIONS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 50V, VGS = 0V
VDS = 45V, VGS = 0V, TC = 150oC
VGS = ±20V
VGS = VDS, ID = 250µA (Figure 10)
ID = 75A, VGS = 10V (Figure 9)
(Figure 3)
TO-247
TO-220, TO-263, TO-262
VDD = 30V, ID 75A,
RL = 0.4, VGS = 10V,
RGS = 3.0
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V,
ID 75A,
RL = 0.4
Ig(REF) = 1.0mA
(Figure 13)
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
MIN TYP MAX UNITS
55 - - V
- - 1 µA
- - 250 µA
-
-
±100
nA
2-4
- 0.0065 0.008
V
- - 0.52 oC/W
- - 30 oC/W
- - 62 oC/W
- - 195 ns
- 16 -
ns
- 112 -
ns
- 37 -
ns
- 28 -
ns
- - 100 ns
-
175 210
nC
- 90 108 nC
-
5.9 7.0
nC
- 14 - nC
- 39 - nC
- 3200 -
- 1170 -
- 310 -
pF
pF
pF
©2003 Fairchild Semiconductor Corporation
HUFA75344G3, HUFA75344P3, HUFA75344S3S, HUFA75344S3 Rev. B1


Part Number HUFA75344S3S
Description 75A/ 55V/ 0.008 Ohm/ N-Channel UltraFET Power MOSFETs
Maker Fairchild Semiconductor
Total Page 10 Pages
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