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HUF76423S3S - N-Channel MOSFET

Key Features

  • Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V - rDS(ON) = 0.035Ω, VGS = 5V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Switching Time vs RGS Curves Ordering Information PART NUMBER.

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📁 Similar Datasheet

Part Number Description Manufacturer
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Other Datasheets by Fairchild (onsemi)

Part Number Description
HUF76423D3 N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet HUF76423P3, HUF76423S3S December 2001 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) HUF76423P3 GATE SOURCE HUF76423S3S Symbol D G S Features • Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V - rDS(ON) = 0.035Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Ordering Information PART NUMBER PACKAGE BRAND HUF76423P3 TO-220AB 76423P HUF76423S3S TO-263AB 76423S NOTE: When ordering, use the entire part number.