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HUF76409P3 - N-Channel MOSFET

Features

  • Ultra Low On-Resistance - rDS(ON) = 0.062Ω, VGS = 10V - rDS(ON) = 0.070Ω, VGS = 5V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve DRAIN (FLANGE) HUF76409P3 Symbol D.
  • Switching Time vs RGS Curves Ordering Information G PART NUMBER S.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HUF76409P3 Data Sheet December 2001 17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.062Ω, VGS = 10V - rDS(ON) = 0.070Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve DRAIN (FLANGE) HUF76409P3 Symbol D • Switching Time vs RGS Curves Ordering Information G PART NUMBER S PACKAGE TO-220AB BRAND 76409P HUF76409P3 NOTE: When ordering, use the entire part number i.e., HUF76409P3 TC = 25oC, Unless Otherwise Specified HUF76409P3 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . .