HUF76113T3ST Datasheet - Fairchild Semiconductor

HUF76113T3ST N-Channel MOSFET

HUF76113T3ST Data Sheet June 2003 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is ® manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applicat.

HUF76113T3ST Features

* Logic Level Gate Drive

* 4.7A, 30V

* Ultra Low On-Resistance, rDS(ON) = 0.031Ω

* Temperature Compensating PSPICE® Model

* Temperature Compensating SABER™ Model

* Thermal Impedance SPICE Model

* Thermal Impedance SABER Model

* Peak Cur

HUF76113T3ST Datasheet (614.97 KB)

HUF76113T3ST Datasheet Preview — Preview of HUF76113T3ST PDF

Datasheet Details

Part number:

HUF76113T3ST

Manufacturer:

Fairchild Semiconductor

File Size:

614.97 KB

Description:

N-channel mosfet.

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HUF76113T3ST N-Channel MOSFET Fairchild Semiconductor

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