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HUF75939P3 - N-Channel MOSFET

Key Features

  • Ultra Low On-Resistance.
  • rDS(ON) = 0.125Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models.
  • www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve Ordering Information PART NUMBER.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet HUF75939P3, HUF75939S3ST December 2001 22A, 200V, 0.125 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE DRAIN (FLANGE) HUF75939P3 HUF75939S3ST Symbol D G S Features • Ultra Low On-Resistance • rDS(ON) = 0.125Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PART NUMBER PACKAGE BRAND HUF75939P3 TO-220AB 75939P HUF75939S3ST TO-263AB 75939S NOTE: When ordering, use the entire part number.