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HUF75617D3S - N-Channel MOSFET

Key Features

  • Ultra Low On-Resistance - rDS(ON) = 0.090Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve SOURCE DRAIN GATE GATE DRAIN (FLANGE) SOURCE DRAIN (FLANGE) HUF75617D3 HUF75617D3S Symbol D Ordering Information PART NUMBER HUF75617D3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HUF75617D3, HUF75617D3S Data Sheet December 2001 16A, 100V, 0.090 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features • Ultra Low On-Resistance - rDS(ON) = 0.090Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve SOURCE DRAIN GATE GATE DRAIN (FLANGE) SOURCE DRAIN (FLANGE) HUF75617D3 HUF75617D3S Symbol D Ordering Information PART NUMBER HUF75617D3 PACKAGE TO-251AA TO-252AA BRAND 75617D 75617D G HUF75617D3S S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF75617D3ST.