of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o.

operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequen.

HGT1S20N60B3S

HGT1S20N60C3R

HGT1S20N60C3RS

HGT1S20N60C3S

HGT1S20N35G3VL

HGT1S20N35G3VLS

HGT1S20N36G3VL

HGT1S20N36G3VLS

HGT1S2N120BNDS

HGT1S2N120BNS

HGT1S2N120CN

HGT1S2N120CNDS

HGT1S2N120CNS

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