G5N120BND - HGTG5N120BND

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Fairchild Semiconductor

Part number	G5N120BND
Manufacturer	Fairchild Semiconductor
File Size	233.09 KB
Description	HGTG5N120BND
Datasheet	G5N120BND Datasheet
Additional preview pages of the G5N120BND datasheet.

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high voltage switching.

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Published: Apr 22, 2014 |