logo

G23N60UFD Datasheet, Fairchild Semiconductor

G23N60UFD sgf23n60ufd equivalent, sgf23n60ufd.

G23N60UFD Avg. rating / M : 1.0 rating-111

datasheet Download (Size : 613.80KB)

G23N60UFD Datasheet

Features and benefits


* High Speed Switching
* Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A
* High Input Impedance
* CO-PAK, IGBT with FRD : trr = 42ns (typ.) Applicat.

Application

such as motor control and general inverters where High Speed Switching is required. Features
* High Speed Switching.

Description

Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features

Image gallery

G23N60UFD Page 1 G23N60UFD Page 2 G23N60UFD Page 3

TAGS

G23N60UFD
SGF23N60UFD
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

Related datasheet

G23N06

G23N06K

G2300

G2301

G2302

G2303

G2304

G2304A

G2305

G2305A

G2306

G2306A

G2307

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts