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G18N120BN Datasheet, Fairchild Semiconductor

G18N120BN hgtg18n120bn equivalent, hgtg18n120bn.

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datasheet Download (Size : 135.35KB)

G18N120BN Datasheet

Features and benefits

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal f.

Application

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

Image gallery

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TAGS

G18N120BN
HGTG18N120BN
Fairchild Semiconductor

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