FSB6726 Datasheet | Fairchild Semiconductor

Super SOTTM-3 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 77. Absolute Maximum Ratings- Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted FSB660/FSB660A 30 40 5 1.5 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range - These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25°C unless otherwise noted Max Characteristic FSB6726 PD RθJA Total Device Dissipation Thermal Resistance, Junction to Ambient 500 250 m W °C/W Units © 1999 Fairchild Semiconductor Corporation Page 1 of 2 fsb6726lwp Pr77 Rev A PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 10 m A IC = 100 µA IE = 100 µA VCB = 40 V VEB = 5V 30 40 5 100 100 V V V n A n A ON CHARACTERISTICS- h FE DC Current Gain IC = 100 m A, VCE = 1 V IC = 1 A, VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage VCE = 1V 60 50 250 500 1.2 m V V IC = 1 A, IB = 100 m A IC = 1 A, VCE = 1 V SMALL SIGNAL CHARACTERISTICS Ccb hfe Collector-Base Capacitance Small Signal Current Gain VCB = 10 V, f = 1MHz IC= 50 m A,VCE = 10V, f=20MHz 2.5 30 25 p F - - Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤...