FSB649 Datasheet | Fairchild Semiconductor

Super SOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process NC. Absolute Maximum Ratings- Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted FSB649 25 35 5 3 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range - These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25°C unless otherwise noted Max Characteristic FSB649 PD RθJA Total Device Dissipation Thermal Resistance, Junction to Ambient 500 250 m W °C/W Units © 1999 Fairchild Semiconductor Corporation fsb649.lwp Pr NC rev A NPN Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 m A IC = 100 µA IE = 100 µA VCB = 30 V VCB = 30 V, TA=100°C IEBO Emitter Cutoff Current VEB = 4V 25 35 5 100 10 100 V V V n A u A n A ON CHARACTERISTICS- h FE DC Current Gain IC = 50 m A, VCE = 2 V IC = 1 A, VCE = 2 V IC = 2 A, VCE = 2 V IC = 6 A, VCE = 2 V VCE(sat) Collector-Emitter Saturation Voltage IC = 1 A, IB = 100 m A IC = 3 A, IB = 300 m A VBE(sat) VBE(on) Base-Emitter Saturation Voltage Base-Emitter On Voltage IC = 1 A, IB = 100 m A IC = 1 A, VCE = 2 V 70 100 75 15 300 600 1.25 1 V V m V 300 - SMALL SIGNAL CHARACTERISTICS Cobo f T Output Capacitance Transition...