FQU4N50TU_WS mosfet equivalent, n-channel qfet mosfet.
* 2.6 A, 500 V, RDS(on) = 2.7 Ω (Max.) @ VGS = 10 V, ID = 1.3 A
* Low Gate Charge (Typ. 10 nC)
* Low Crss (Typ. 6.0 pF)
* 100% Avalanche Tested
D
GDS
I.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
Image gallery
TAGS
Download (Size : 908.05KB)