FQU4N50TU_WS Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and...
FQU4N50TU_WS Key Features
- 2.6 A, 500 V, RDS(on) = 2.7 Ω (Max.) @ VGS = 10 V, ID = 1.3 A
- Low Gate Charge (Typ. 10 nC)
- Low Crss (Typ. 6.0 pF)
- 100% Avalanche Tested