FQPF6N80T mosfet equivalent, n-channel mosfet.
* 3.3 A, 800 V, RDS(on) = 1.95 Ω (Max.) @ VGS = 10 V, ID = 1.65 A
* Low Gate Charge (Typ. 31 nC)
* Low Crss (Typ. 14 pF)
* 100% Avalanche Tested
* 100.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
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