Datasheet Details
| Part number | FQPF5P20 |
|---|---|
| Manufacturer | Fairchild (onsemi) |
| File Size | 615.19 KB |
| Description | 200V P-Channel MOSFET |
| Datasheet |
 FQPF5P20 Datasheet
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General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- -3.4A, -200V, RDS(on) = 1.4Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested S !.
- G! ▶ ▲.
- GD S TO-220F FQPF Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1).