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FQPF4N90C - 900V N-Channel MOSFET

Download the FQPF4N90C datasheet PDF. This datasheet also covers the FQP4N90C variant, as both devices belong to the same 900v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Key Features

  • 4.0 A, 900 V, RDS(on) = 4.2 Ω (Max. ) @ VGS = 10 V, ID = 2.0 A.
  • Low Gate Charge (Typ. 17 nC).
  • Low Crss (Typ. 5.6 pF).
  • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FQP4N90C_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fairchild (onsemi)

Part Number Description
FQPF4N90 900V N-Channel MOSFET
FQPF4N20 200V N-Channel MOSFET
FQPF4N20L 200V LOGIC N-Channel MOSFET
FQPF4N25 250V N-Channel MOSFET
FQPF4N50 500V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω December 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 4.0 A, 900 V, RDS(on) = 4.2 Ω (Max.) @ VGS = 10 V, ID = 2.0 A • Low Gate Charge (Typ. 17 nC) • Low Crss (Typ. 5.