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FQPF4N90C, FQP4N90C Datasheet - Fairchild Semiconductor

FQPF4N90C 900V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQPF4N90C Features

* 4.0 A, 900 V, RDS(on) = 4.2 Ω (Max.) @ VGS = 10 V, ID = 2.0 A

* Low Gate Charge (Typ. 17 nC)

* Low Crss (Typ. 5.6 pF)

* 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS

FQP4N90C_FairchildSemiconductor.pdf

This datasheet PDF includes multiple part numbers: FQPF4N90C, FQP4N90C. Please refer to the document for exact specifications by model.
FQPF4N90C Datasheet Preview Page 2 FQPF4N90C Datasheet Preview Page 3

Datasheet Details

Part number:

FQPF4N90C, FQP4N90C

Manufacturer:

Fairchild Semiconductor

File Size:

1.18 MB

Description:

900v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: FQPF4N90C, FQP4N90C.
Please refer to the document for exact specifications by model.

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FQPF4N90C FQP4N90C 900V N-Channel MOSFET Fairchild Semiconductor

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