FQPF4N90C 900V N-Channel MOSFET
• 4.0 A, 900 V, RDS(on) = 4.2 Ω (Max.) @ VGS = 10 V, ID = 2.0 A • Low Gate Charge (Typ. 17 nC) • Low Crss (Typ. 5.6 pF) • 100% Avalanche Tested D GD.
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