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FQPF32N20C - N-Channel QFET MOSFET

Download the FQPF32N20C datasheet PDF. This datasheet also covers the FQP32N20C variant, as both devices belong to the same n-channel qfet mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Key Features

  • 28 A, 200 V, RDS(on) = 82 mΩ (Max. ) @ VGS = 10 V, ID = 14 A.
  • Low Gate Charge (Typ. 82.5 nC).
  • Low Crss (Typ. 185 pF).
  • 100% Avalanche Tested.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FQP32N20C-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fairchild (onsemi)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQP32N20C / FQPF32N20C — N-Channel QFET® MOSFET FQP32N20C / FQPF32N20C N-Channel QFET® MOSFET 200 V, 28 A, 82 mΩ November 2013 Features • 28 A, 200 V, RDS(on) = 82 mΩ (Max.) @ VGS = 10 V, ID = 14 A • Low Gate Charge (Typ. 82.5 nC) • Low Crss (Typ. 185 pF) • 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.