Datasheet Details
| Part number | FQP9N08 |
|---|---|
| Manufacturer | Fairchild (onsemi) |
| File Size | 536.60 KB |
| Description | 80V N-Channel MOSFET |
| Datasheet |
 FQP9N08 Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 13 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Dr.