Datasheet Details
| Part number | FQP7P06 |
|---|---|
| Manufacturer | Fairchild (onsemi) |
| File Size | 657.39 KB |
| Description | 60V P-Channel MOSFET |
| Datasheet |
 FQP7P06 Datasheet
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General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- -7A, -60V, RDS(on) = 0.41Ω @VGS = -10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating S !.
- G! ▶ ▲.
- G DS TO-220 FQP Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (.