FQP6N60C - 600V N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FQP6N60C
Manufacturer	Fairchild Semiconductor
File Size	948.96 KB
Description	600V N-Channel MOSFET
Datasheet	FQP6N60C Datasheet
Additional preview pages of the FQP6N60C datasheet.

Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology.

Features

5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 7 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
◀ ▲.
G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - C.

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Published: Jul 11, 2008 |