FQP6N60C mosfet equivalent, 600v n-channel mosfet.
*
*
*
*
*
* 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 7 pF) Fast switching 100% avalanche tested .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pro.
Image gallery
TAGS
Download (Size : 948.96KB)