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FQP4P25 Datasheet 250v P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQP4P25 December 2000 QFET FQP4P25 250V P-Channel MOSFET General.

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and mutation modes.

These devices are well suited for high efficiency switching DC/DC converters.

Key Features

  • -4.0A, -250V, RDS(on) = 2.1Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 10.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability S !.
  • G! G ▶ ▲.
  • DS TO-220 FQP Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C.

More Datasheets from Fairchild (now onsemi)

Part Number Description
FQP4P40 400V P-Channel MOSFET
FQP44N08 80V N-Channel MOSFET
FQP44N10 100V N-Channel MOSFET
FQP45N15V2 150V N-Channel MOSFET
FQP46N15 150V N-Channel MOSFET
FQP47P06 60V P-Channel MOSFET
FQP4N20 200V N-Channel MOSFET
FQP4N20 200V LOGIC N-Channel MOSFET
FQP4N20L N-Channel MOSFET
FQP4N25 250V Channel MOSFET

FQP4P25 Distributor