FQP4P25 Datasheet | Fairchild Semiconductor

Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and mutation modes. These devices are well suited for high efficiency switching DC/DC converters. Features - - - - - - -4.0A, -250V, RDS(on) = 2.1Ω @VGS = -10 V Low gate charge ( typical 10 n C) Low Crss ( typical 10.3 p F) Fast switching 100% avalanche tested Improved dv/dt capability ! - - G! G ▶ ▲ - DS TO-220 FQP Series ! Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP4P25 -250 -4.0 -2.53 -16 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V m J A m J V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 280 -4.0 7.5 -5.5 75 0.6 -55 to +150 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.5 -Max 1.67 -62.5 Units °C/W °C/W °C/W ©2000 Fairchild Semiconductor International Rev. A2, December 2000 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test...