FQP4N90 Datasheet | Fairchild Semiconductor

October 2001 QFET 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies. Features - - - - - - 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V Low gate charge ( typically 24 n C) Low Crss ( typically 9.5 p F) Fast switching 100% avalanche tested Improved dv/dt capability ! " G! G DS ! " " " TO-220 IRF...