FQP4N90 Key Features
- 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V Low gate charge ( typically 24 nC) Low Crss ( typically 9.5 pF) Fast switching
- Part: FQP4N90
- Manufacturer: Fairchild (official site)
- Size: 633.67 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FQP4N90C | 900V N-Channel MOSFET |
| FQP4N20 | 200V N-Channel MOSFET |
| FQP4N20 | 200V LOGIC N-Channel MOSFET |
| FQP4N20L | N-Channel MOSFET |
| FQP4N25 | 250V Channel MOSFET |
FQP4N90 Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies.