FQP3N60C mosfet equivalent, n-channel mosfet.
* 3.0 A, 600 V, RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.5 A
* Low Gate Charge (Typ. 10.5 nC)
* Low Crss (Typ. 5.0 pF)
* 100% Avalanche Tested
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GD S.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
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