Title | N채널 200V 31A(Tc) 180W(Tc) 스루홀 TO-220-3 |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC... |
Features |
• • • • • • • 31A, 200V, RDS(on) = 0.075Ω @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 52 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct opration from logic drivers D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VG... |
Datasheet |
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