FQP2N60 Datasheet 600V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

FQP2N60 600v n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FQP2N60
Manufacturer	Fairchild (now onsemi)
File Size	570.43 KB
Description	600V N-Channel MOSFET
Datasheet	FQP2N60 Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supply.

Overview

FQP2N60 April 2000 QFET FQP2N60 600V N-Channel MOSFET General.

Key Features

2.4A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G DS G! ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Cur.

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